Ion implanter and method for adjusting ion beam
US7807986B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2009 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | May 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.