Method of making three dimensional NAND memory

US7808038B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Nima Mokhlesi · Los Gatos, US
• Roy E. Scheuerlein · Cupertino, US

Key dates

• Filing date: Mar 27, 2007
• Grant date: Oct 5, 2010
• Expiry date: Jun 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/27

Abstract

A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is a first pillar having a square or rectangular cross section when viewed from above, the first pillar being a first conductivity type semiconductor region located between second conductivity type semiconductor regions. A semiconductor active region of the second memory cell is a second pillar having a square or rectangular cross section when viewed from above, the second pillar located under the first pillar, the second pillar being a first conductivity type semiconductor region located between second conductivity type semiconductor regions. One second conductivity type semiconductor region in the first pillar contacts one second conductivity type semiconductor region in the second pillar.