Carbon-on-insulator substrates by in-place bonding
US7811906B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2009 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Nov 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An in-place bonding method in which a metal template layer under a carbon layer is removed while the carbon layer is still attached to a substrate is described for forming a carbon-on-insulator substrate. In one embodiment of the in-place bonding method, at least one layered metal/carbon (M/C) region is formed on an insulating surface layer of an initial substrate structure. The at least one layered M/C region has edges that are bordered by exposed regions of the insulating surface layer. Some edges of the at least one layered M/C region are then secured to a base substrate of the initial structure via a securing structure, while other edges are left exposed. A selective metal etchant removes the metal layer under the carbon layer using the exposed edges for access. After metal etching, the now-unsupported carbon layer bonds to the underlying insulating surface layer by attraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.