Method for manufacturing semiconductor device and epitaxial growth equipment
US7811907B2 · kind B2 · utility
14Cited by
17References
20Claims
0Family size
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Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Sep 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.