Process for producing silicon carbide crystals having increased minority carrier lifetimes

US7811943B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Calvin H. Carter, Jr. · Cary, US
• Jason Jenny · Raleigh, US
• David Phillip Malta · Raleigh, US
• Hudson M. Hobgood · Pittsboro, US
• Valeri F. Tsvetkov · Durham, US
• Mrinal K. Das · Morrisville, US

Key dates

• Filing date: Feb 7, 2005
• Grant date: Oct 12, 2010
• Expiry date: Sep 20, 2026

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B33/02
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.