Semiconductor device and a method of manufacture therefor
US7811944B2 · kind B2 · utility
0Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2005 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Nov 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a substrate, and a graded capping layer located over the substrate, wherein the graded capping layer includes at least two different layers, wherein first and second layers of the at least two different layers have different stress values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.