Non-volatile memory device and a method of programming a multi level cell in the same
US7813188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2008 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a multi level cell in a non-volatile memory device includes providing different data to main cells and indicator cells. The main cells and indicator cells have different threshold voltages in accordance with the data. A program operation is performed on a main cell and an indicator cell. A first verifying operation is performed based on a first verifying voltage of the main cell and the indicator cell. The program operation and the first verifying operation are performed repeatedly until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage. A second verifying operation is performed on the main cell based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.