Method for controlling a process for fabricating integrated devices
US7815812B2 · kind B2 · utility
2Cited by
14References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Aug 19, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.