Semiconductor device and method for manufacturing the same

US7816198B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Ostermayr · Straubing, DE
• Winfried Kamp · Munich, DE
• Anton Huber · Burghausen, DE

Key dates

• Filing date: Jul 10, 2007
• Grant date: Oct 19, 2010
• Expiry date: Jan 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.