Method for fabricating capacitor in semiconductor device
US7816202B2 · kind B2 · utility
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4References
27Claims
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Key dates
| Filing date | Jun 27, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jul 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first Ru1−xOx layer over the substrate, forming a Ru layer for a lower electrode over the first Ru1−xOx layer and deoxidizing the first Ru1−xOx layer, forming a dielectric layer over the Ru layer for a lower electrode, and forming a conductive layer for an upper electrode over the dielectric layer, wherein the first Ru1−xOx layer contains oxygen in an amount less than an oxygen amount of a RuO2 layer.
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