Method for fabricating a semiconductor device
US7816203B1 · kind B1 · utility
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2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | May 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for fabricating a semiconductor device having a gate electrode overlying a gate insulator. The method, in accordance with one embodiment, comprises depositing a layer of spin on glass overlying the gate electrode, the layer of spin on glass comprising a substantially UV opaque material. The layer of spin on glass is heated to a temperature less than about 450° C., and all subsequent process steps in the fabrication of the device are limited to temperatures less than about 450° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.