Patent · US Active

Technique for removing resist material after high dose implantation in a semiconductor device

US7816273B2 · kind B2 · utility

3Cited by

4References

17Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Christian Krueger · Stuttgart, DE
Volker Grimm · Neustadt an der Donau, DE
Lutz Eckart · Dresden, DE

Key dates

Filing date	Jul 25, 2007
Grant date	Oct 19, 2010
Priority date	—
Expiry date	Sep 14, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P80/30
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.