MIGFET circuit with ESD protection

US7817387B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Michael G. Khazhinsky · Austin, US
• Leo Mathew · Austin, US
• James W. Miller · Austin, US

Key dates

• Filing date: Jan 9, 2008
• Grant date: Oct 19, 2010
• Expiry date: Dec 5, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

An electrostatic discharge (ESD) protected circuit is coupled to a power supply voltage rail and includes a multiple independent gate field effect transistor (MIGFET), a pre-driver, and a hot gate bias circuit. The MIGFET has a source/drain path coupled between an output pad and the power supply voltage rail and has a first gate terminal and a second gate terminal. The pre-driver circuit has an output. The hot gate bias circuit is coupled to the first gate terminal of the MIGFET, and the output of the pre-driver circuit is coupled to the second gate terminal of the MIGFET. The hot gate bias circuit is configured to apply a bias voltage to the first gate terminal of the MIGFET during an ESD event that increases the breakdown voltage of the MIGFET so as to better withstand the ESD event.