Method and system for lithographic simulation and verification
US7818710B2 · kind B2 · utility
4Cited by
6References
10Claims
0Family size
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Key dates
| Filing date | Jul 3, 2007 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Sep 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and systems for lithographic simulation and verification comprising a process in the frequency domain or in the spatial domain of calculating intensity at a location (x, y) for a number of defocus values. In addition, evaluating the intensity calculation result to determine if the intensity level will result in the mask pattern being written onto a wafer. The verification process may be calculated in the spatial domain or in the frequency domain. The calculations may be done such that full focus window calculations may be obtained by isolating the defocus parameter “z” in the calculations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.