Methods for cleaning ion implanter components
US7819981B2 · kind B2 · utility
8Cited by
60References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2004 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Dec 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.