Process of forming an electronic device including a conductive structure extending through a buried insulating layer

US7820519B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Todd C. Roggenbauer · Chandler, US
• Vishnu Khemka · Phoenix, US
• Ronghua Zhu · Chandler, US
• Amitava Bose · Tempe, US
• Paul Hui · Mesa, US
• Xiaoqiu Huang · Plano, US
• Van Wong · Round Rock, US

Key dates

• Filing date: Nov 3, 2006
• Grant date: Oct 26, 2010
• Expiry date: Nov 15, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can also include forming a field isolation region within the semiconductor layer, and forming an opening extending through the semiconductor layer and the buried insulating layer to expose the substrate. The process can further include forming a conductive structure within the opening, wherein the conductive structure abuts the substrate.