Semiconductor component comprising a drift zone and a drift control zone

US7821033B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Stefan Sedlmaier · Munich, DE
• Anton Mauder · Kolbermoor, DE
• Armin Willmeroth · Friedberg, DE
• Franz Hirler · Isen, DE

Key dates

• Filing date: Feb 15, 2007
• Grant date: Oct 26, 2010
• Expiry date: Feb 15, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/143

Abstract

A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.