Transistor with improved tip profile and method of manufacture thereof

US7821044B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Mark Bohr · Beaverton, US
• Steven J. Keating · Beaverton, US
• Thomas A. Letson · Beaverton, US
• Anand S. Murthy · Beaverton, US
• Donald W. O'Neill · Portland, US
• Willy Rachmady · Beaverton, US

Key dates

• Filing date: Jan 15, 2008
• Grant date: Oct 26, 2010
• Expiry date: Jan 15, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.