Contact pad structure for flip chip semiconductor die
US7821133B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Mar 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A flip chip Schottky die is provided, which includes three contact bumps extending from a top surface of the die for electrically connecting with a board, a first and second bump being cathode contacts, and a third bump being an anode contact and having a larger surface than each of the first and second bumps for a 0.5 ampere device. Each bump is substantially rectangular at its base, but may have a curved or arched top surface on a square die. Also, provided is a contact bump useful in a flip chip device, such as a MOSFET or diode for a current of 1.0 amperes that includes a solder body of PbSn or a solder body free of lead comprising SnAgCu. Such a contact bump is substantially rectangular, and a height of approximately 120 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.