Nonvolatile memory device and method including resistor and transistor
US7821809B2 · kind B2 · utility
5Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2005 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Nov 7, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/75
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.