Silicon wafer and method for manufacturing the same
US7824493B2 · kind B2 · utility
0Cited by
17References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2005 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.