Variable volume plasma processing chamber and associated methods
US7824519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Nov 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.