Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7824956B2 · kind B2 · utility
96Cited by
53References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jun 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.