Method of fabricating a semiconductor device

US7825031B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Dirk Manger · Dresden, DE
• Rolf Weis · Dresden, DE
• Christoph Noelscher · Nuremberg, DE

Key dates

• Filing date: Sep 14, 2007
• Grant date: Nov 2, 2010
• Expiry date: May 16, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76816
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a method of fabricating an integrated circuit, including the steps of providing at least one layer; performing a first implantation step, wherein particles are implanted into the layer under a first direction of incidence; performing a second implantation step, wherein particles are implanted into the layer under a second direction of incidence which is different from the first direction of incidence; performing a removal step, wherein the layer is partially removed depending on the local implant dose generated by the first and the second implantation step.