Vertical plasma processing method for forming silicon containing film
US7825039B2 · kind B2 · utility
75Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Apr 28, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45574
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vertical plasma processing apparatus for a semiconductor process includes a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction, and a marginal space out of the process field. In processing the target substrates, a control section simultaneously performs supply of a process gas to the process field from a process gas supply circuit and supply of a blocking gas to the marginal space from a blocking gas supply circuit to inhibit the process gas from flowing into the marginal space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.