Junction field effect transistor with a hyperabrupt junction
US7825441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Apr 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/87
Abstract
A junction field effect transistor (JFET) has a hyperabrupt junction layer that functions as a channel of a JFET. The hyperabrupt junction layer is formed by two dopant profiles of opposite types such that one dopant concentration profile has a peak concentration depth at a tail end of the other dopant profile. The voltage bias to the channel is provided by a body that is doped with the same type of dopants as the gate. This is in contrast with conventional JFETs that have a body that is doped with the opposite conductivity type as the gate. The body may be electrically decoupled from the substrate by another reverse bias junction formed either between the body and the substrate or between a buried conductor layer beneath the body and the substrate. The capability to form a thin hyperabrupt junction layer allows formation of a JFET in a semiconductor-on-insulator substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.