Patent · US Active

Semiconductor component having a drift zone and a drift control zone

US7825467B2 · kind B2 · utility

5Cited by

4References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Armin Willmeroth · Friedberg, DE
Anton Mauder · Kolbermoor, DE
Franz Hirler · Isen, DE

Key dates

Filing date	Sep 30, 2008
Grant date	Nov 2, 2010
Priority date	—
Expiry date	Feb 26, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/512
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.