Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits

US7828987B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jens Schneider · Bielefeld, DE
• Ying Xiao · Stevensville, US
• Gerardo Delgadino · Fremont, US

Key dates

• Filing date: Mar 20, 2006
• Grant date: Nov 9, 2010
• Expiry date: Aug 2, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76829
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2 and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.