Patent · US Active

Method for plasma etching a chromium layer suitable for photomask fabrication

US7829243B2 · kind B2 · utility

2Cited by

58References

21Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Xiaoyi Chen · Mountain View, US
Michael N. Grimbergen · Redwood City, US
Madhavi R. Chandrachood · Sunnyvale, US
Jeffrey X. Tran · Fremont, US
Ajay Kumar · Fairport, US
Simon W. Tam · San Francisco, US
Ramesh Krishnamurthy · Sunnyvale, US

Key dates

Filing date	Jan 27, 2005
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Jul 26, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/80
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.