Laterally double-diffused metal oxide semiconductor transistor and method for fabricating the same
US7829408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.