Semiconductor device having localized insulated block in bulk substrate and related method
US7829429B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Aug 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76264
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One or more trenches can be formed around a first portion of a semiconductor substrate, and an insulating layer can be formed under the first portion of the semiconductor substrate. The one or more trenches and the insulating layer electrically isolate the first portion of the substrate from a second portion of the substrate. The insulating layer can be formed by forming a buried layer in the substrate, such as a silicon germanium layer in a silicon substrate. One or more first trenches through the substrate to the buried layer can be formed, and open spaces can be formed in the buried layer (such as by using an etch selective to silicon germanium over silicon). The one or more first trenches and the open spaces can optionally be filled with insulative material(s). One or more second trenches can be formed and filled to isolate the first portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.