Nitride nanowires and method of producing such

US7829443B2 · kind B2 · utility

Assignee

• QUNANO AB · SE

Inventors

• Werner Seifert · Bargteheide, DE
• Damir Asoli · Malmö, SE
• Zhaoxia Bi · Lund, SE

Key dates

• Filing date: Jan 14, 2008
• Grant date: Nov 9, 2010
• Expiry date: Aug 10, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/932
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.