Patent · US Active

Method for producing a polished semiconductor

US7829467B2 · kind B2 · utility

0Cited by

16References

16Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Maximilian Stadler · Haiming, DE
Gunter Schwab · Emmerting, DE
Diego Feijoo · Burghausen, DE
Karlheinz Langsdorf · Burghausen, DE

Key dates

Filing date	May 4, 2007
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Sep 8, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02046
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.