Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor

US7829916B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Yves Morand · Grenoble, FR
• Thierry Poiroux · Voiron, FR
• Maud Vinet · Voiron, FR

Key dates

• Filing date: May 23, 2006
• Grant date: Nov 9, 2010
• Expiry date: Mar 11, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6735

Abstract

Source and drain electrodes are each formed by an alternation of first and second layers made from a germanium and silicon compound. The first layers have a germanium concentration comprised between 0% and 10% and the second layers have a germanium concentration comprised between 10% and 50%. At least one channel connects two second layers respectively of the source electrode and drain electrode. The method comprises etching of source and drain zones, connected by a narrow zone, in a stack of layers. Then superficial thermal oxidation of said stack is performed so a to oxidize the silicon of the germanium and silicon compound having a germanium concentration comprised between 10% and 50% and to condense the germanium Ge. The oxidized silicon of the narrow zone is removed and a gate dielectric and a gate are deposited on the condensed germanium of the narrow zone.