Semiconductor device and method of fabricating the same
US7829953B2 · kind B2 · utility
9Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Aug 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, a gate insulating layer formed on the semiconductor substrate, an NMOS gate formed on the gate insulating layer of the NMOS region, and a PMOS gate formed on the gate insulating layer of the PMOS region. Any one of the NMOS gate and the PMOS gate includes a one-layered conductive layer pattern, and another of the NMOS gate and the PMOS gate includes a three-layered conductive layer pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.