Patent · US Active

Semiconductor device including a pressure sensor

US7832279B2 · kind B2 · utility

8Cited by

10References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Boris Binder · Dresden, DE
Dirk Meinhold · Dresden, DE
Ben Rosam · Dresden, DE
Bernd Foeste · Dresden, DE
Andreas Thamm · Dresden, DE

Key dates

Filing date	Sep 11, 2008
Grant date	Nov 16, 2010
Priority date	—
Expiry date	Nov 28, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG01L15/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.