Methods for forming a transistor

US7833869B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Faran Nouri · Los Altos, US
• Lori D. Washington · Union City, US
• Victor Moroz · Saratoga, US

Key dates

• Filing date: Jul 29, 2008
• Grant date: Nov 16, 2010
• Expiry date: Jan 30, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

Methods are provided for depositing materials in forming semiconductor devices on a substrate, such as metal oxide transistors. In one embodiment, the invention generally provides a method of processing a substrate including forming a gate dielectric on a substrate having a first conductivity, forming a gate electrode on the gate dielectric, forming a first pair of sidewall spacers along laterally opposite sidewalls of the gate electrode, etching a pair of source/drain region definitions on opposite sides of the electrode, depositing a silicon carbide material selectively in the source/drain region definitions, and implanting a dopant in the deposited silicon carbide material to form a source/drain region having a second conductivity.