Nitride read-only memory cell and method of manufacturing the same
US7834382B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 5, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Mar 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A nitride read-only memory cell and a method of manufacturing the same are provided. First, a substrate is provided, and a first oxide layer is formed on the substrate. Next, a nitride layer is deposited on the first oxide layer via a first gas and a second gas. The flow ratio of the first gas to the second gas is 2:1. After that, a second oxide layer is formed on the nitride layer. Then, a bit-line region is formed at the substrate. Afterward, a gate is formed on the second oxide layer. The first oxide layer, nitride layer, the second oxide layer and the gate compose a stack structure of the cell. Further, a spacer is formed on the side-wall of the stack structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.