Electronic structures including barrier layers defining lips
US7834454B2 · kind B2 · utility
5Cited by
42References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Nov 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0723
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.