Capacitor and method for fabricating the same
US7835134B2 · kind B2 · utility
11Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Sep 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.