Non-volatile memory device and method of manufacturing the same
US7838379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2009 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jan 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.