Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species
US7838428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Sep 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.