Drain-extended field effect transistor

US7838940B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jens Schneider · Bielefeld, DE
• Harald Gossner · Riemerling, DE

Key dates

• Filing date: Dec 4, 2007
• Grant date: Nov 23, 2010
• Expiry date: Jan 5, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/371

Abstract

A drain-extended field effect transistor includes a drain contact region and a drain extension region. The drain-extended field effect transistor further includes an electrostatic discharge protection region that is electrically connected between the drain contact region and the drain extension region to protect the drain-extended field effect transistor against electrostatic discharge. The electrostatic discharge protection region has a dopant concentration level such that in case of an electrostatic discharge event, a base push-out is prevented from reaching the drain contact region.