Low-k b-doped SiC copper diffusion barrier films
US7842604B1 · kind B1 · utility
17Cited by
43References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2007 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Jun 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.