Micromechanical semiconductor sensor

US7843025B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Hubert Benzel · Neckartenzlingen, DE
• Frank Schaefer · Lörrach, DE
• Simon Armbruster · Wannweil, DE
• Gerhard Lammel · Lörrach, DE
• Christoph Schelling · Stuttgart, DE
• Joerg Brasas · Neckartenzlingen, DE

Key dates

• Filing date: Jan 26, 2009
• Grant date: Nov 30, 2010
• Expiry date: Jan 26, 2029

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0136
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.