Patent · US Active

MIM capacitors with catalytic activation layer

US7843035B2 · kind B2 · utility

1Cited by

31References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Barth · Munich, DE
Petra Felsner · Munich, DE
Erdem Kaltalioglu · Newburgh, US
Gerald Friese · Munich, DE

Key dates

Filing date	Jul 30, 2008
Grant date	Nov 30, 2010
Priority date	—
Expiry date	Mar 5, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/682
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An embodiment of a MIM capacitor includes a first insulating layer formed over a wafer and a first capacitor plate formed over the wafer within the first insulating layer. The MIM capacitor further includes a second insulating layer formed over the first insulating layer, a capacitor dielectric formed over the first capacitor plate within the second insulating layer and a second capacitor plate formed over the capacitor dielectric within the second insulating layer. A recess is formed in the second capacitor plate below an upper surface of the second insulating layer and a catalytic activation layer is formed in the recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.