Patent · US Active

System and method for performing post-plating morphological Cu grain boundary analysis

US7844101B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Applied Materials Israel Ltd. · IL

Inventors

Vicky Svidenko · San Jose, US
Lior Levin · Raanana, IL

Key dates

Filing date	Jan 31, 2006
Grant date	Nov 30, 2010
Priority date	—
Expiry date	Oct 31, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG01N23/2251
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Grain size variations within a copper film are quantified by analyzing an SEM image of a portion of the copper film, determining an approximate total length of grain boundaries within the SEM image, and calculating a grain boundary density based on the approximate total length of the grain boundaries and the area of the copper film represented in the SEM image. The calculated grain boundary density allows for correlating plating and anneal process parameters, as well as electrical and reliability performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.