Method of pulsing vapor precursors in an ALD reactor
US7846499B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2004 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jan 5, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45527
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method. The method comprises vaporizing at least one precursor from a source material container maintained at a vaporising temperature, repeatedly feeding pulses of the vaporized precursor via a feed line into the reaction chamber at a first pressure, and subsequently purging the reaction chamber with pulses of inactive gas fed via the feed line at a second pressure. The second pressure is maintained at the same as or a higher level than the first pressure for separating successive pulses of said vaporized precursor from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.