Photopatternable deposition inhibitor containing siloxane
US7846644B2 · kind B2 · utility
5Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Feb 9, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.