Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices

US7846757B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Robert M. Farrell · Goleta, US
• Troy J. Baker · Raleigh, US
• Arpan Chakraborty · Goleta, US
• Benjamin A. Haskell · Lompoc, US
• P. Morgan Pattison · Menifee, US
• Rajat Sharma · San Jose, US
• Umesh Mishra · Montecito, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Jun 1, 2006
• Grant date: Dec 7, 2010
• Expiry date: Sep 23, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2304/04
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.